The T-series photoresist is designed to meet the requirements of advanced device fabrication, such as MEMS, Lithography, microfluidic, integrated circuit, bumping RDL (Redistribution Layer, 2/2um) / TSV (Through Silicon Via) process applications.
•Multiwavelength (I-line, g-line and broadband)
•High photo-speed. 150 to 800 mJ/cm2
•Film thickness from 2um to 90um
•Excellent resolution for 1/1um (lines/spaces) min.
•High aspect rate
•Au, Cu, Ni, SuAg plating application
•Vertical photoresist profile 90+/-1℃
•After plating, no evidence of footing/undercut defectives Easy to strip by commercial NMP / DMSO based stripper
